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(R)
74LVX4245
OCTAL DUAL SUPPLY BUS TRANSCEIVER
PRELIMINARY DATA
s s
s s
s
s
s
s
s
HIGH SPEED: tPD = 6 ns (TYP.) at VCC = 3.3V LOW POWER DISSIPATION: ICC = 8 A (MAX.) at TA = 25 oC LOW NOISE: VOLP = 0.3V (TYP.) at VCC = 3.3V SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL OPERATING VOLTAGE RANGE: VCCA (OPR) =4.5V to 5.5V (1.2V Data Retention) VCCB (OPR) = 2.7V to 3.6V (1.2VData Retention) PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 4245 IMPROVED LATCH-UP IMMUNITY
M (Micro Package)
T (TSSOP Package)
ORDER CODES : 74LVX4245M 74LVX4245T speed operation while maintaining the CMOS low power dissipation. This IC is intended for two-way asynchronous communication between data buses; the direction of data trasmission is determined by DIR input. The enable input G can be used to disable the device so that the buses are effectively isolated. The A-port interfaces with the 5V bus, the B-port with the 3.3V bus. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess
DESCRIPTION The LVX4245 is a dual supply low voltage CMOS OCTAL BUS TRANSCEIVER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. Designed for use as an interface between a 5V bus and a 3.3V bus in mixed 5V/3.3V supply sistems, it achieves high
PIN CONNECTION AND IEC LOGIC SYMBOLS
March 1999
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74LVX4245
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No 2 3, 4, 5, 6, 7, 8, 9, 10 21, 20, 19, 18, 17, 16, 15, 14 22 11, 12, 13 23 1 24 SYMBOL DIR A1 to A8 B1 to B8 NAME AND FUNCT ION Directional Control Data Inputs/Outputs Data Inputs/Outputs
G GND NC VCCA VCCB
Output Enable Input Ground (0V) Not Connected Positive Supply Voltage Positive Supply Voltage
TRUTH TABLE
INPUT G L L H
X:"H" or "L" Z: High impedance
F UNCTION DIR L H X A BUS OUTPUT INPUT Z B BUS INPUT OUTPUT Z
OUT PUT A=B B=A Z
ABSOLUTE MAXIMUM RATINGS
Symbol VCCA VCCB VI VI/OA VI/OB IIK IOK IOA IOB ICCA ICCB Pd Tstg TL Supply Voltage Supply Voltage DC Input Voltage DC I/O Voltage DC I/O Voltage DC Input Diode Current DC Output Diode Current DC Output Current DC Output Current DC VCC or Ground Current DC VCC or Ground Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCCA + 0.5 -0.5 to VCCA + 0.5 -0.5 to VCCB + 0.5 20 50 50 50 200 100 180 -65 to +150 300 Unit V V V V V mA mA mA mA mA mA mW
o o
C C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. (*) 500mW: 65 oC derated to 300 mW by 10 mW/oC: 65 oC to 85 oC
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RECOMMENDED OPERATING CONDITIONS
Symbol VCCA VCCB VI VI/OA VI/OB Top tr, tf Supply Voltage Supply Voltage Input Voltage I/O Voltage I/O Voltage Operating Temperature (note 1) Input Rise and Fall Time (note 2) Parameter Valu e 4.5 to 5.5 2.7 to 3.6 0 to VCCA 0 to VCCA 0 to VCCB -40 to +85 0 to 8 Unit V V V V V
o
C
ns/V
1) VIN from 30% to70%of VCC 2) VCCA = 4.5 to 5.5;VCCB = 2.7 to 3.6V
DC SPECIFICATIONS FOR VCCA
Symb ol Parameter T est Con ditio ns V CCA VCCB (V) (V) VIHA VILA VOHA VOLA IIA IOZA High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current 3 State Output Leakage Current Quiescent Supply Current 4.5 5.5 4.5 5.5 4.5 4.5 4.5 4.5 5.5 5.5 3.3 3.3 3.3 3.3 3.0 3.0 3.0 3.0 3.6 3.6 I O=-100 A IO=-24 mA IO=100 A IO=24 mA VI = VCCA or GND VIA = VIHA or VILA VIB = VIHB or VILB VI/OA = VCCA or GND V I A =V CCA or GND V I B =V CCB or GND V IA = 3.4V, other V I = V CCA or GND 4.4 3.86 0.0 0.1 0.36 0.1 0.5 4.5 Min . 2.0 2.0 0.8 0.8 4.4 3.76 0.1 0.44 1.0 5.0 Typ. Value TA = 25 oC Max. -40 to 85 o C Min. 2.0 2.0 0.8 0.8 Max. V V V V A A Unit
ICCA ICCTA
5.5 5.5
3.6 3.6
8 1.35
80 1.5
mA mA
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74LVX4245
DC SPECIFICATIONS FOR VCCB
Symb ol Parameter T est Con ditio ns V CCA VCCB (V) (V) VIHB VILB VOHB High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current 3 State Output Leakage Current Quiescent Supply Current 5.0 5.0 5.0 5.0 4.5 4.5 4.5 VOLB 4.5 4.5 4.5 IIB IOZB ICCB ICCTB 5.5 5.5 5.5 5.5 3.6 2.7 3.6 2.7 3.0 3.0 2.7 3.0 3.0 2.7 3.6 3.6 3.6 3.6 I O=-100 A IO=-12 mA IO=-8 mA IO=100 A IO=12 mA IO=8 mA VI = VCCA or GND VIA = VIHA or VILA VI/OB = VCCB or GND V I A =V CCA or GND V I B =V CCB or GND V IB = 3.4V, other V I = V CCB or GND 2.9 2.48 2.26 0.0 0.1 0.31 0.31 0.1 0.5 5 0.35 3.0
o
Value TA = 25 C Min . 2.0 2.0 0.8 0.8 2.9 2.40 2.20 0.1 0.40 0.40 1.0 5.0 50 0.5 Typ. Max. -40 to 85 C Min. 2.0 2.0 0.8 0.8 Max.
o
Unit
V V
V
V A A mA mA
DYNAMIC SWITCHING CHARACTERISTICS
Symb ol Parameter T est Con ditio ns V CCA VCCB (V) (V) VOLPA VOLPB VIHDA VILDA VIHDB VILDB Dynamic Low Voltage Quiet Output (note 1, 2) Dynamic Low Voltage Quiet Output (note 1, 2) Dynamic High Voltage Input (note 1, 3) Dynamic Low Voltage Input (note 1, 3) Dynamic High Voltage Input (note 1, 3) Dynamic Low Voltage Input (note 1, 3) 5.0 5.0 5.0 5.0 5.0 5.0 3.3 -1.2 3.3 -0.8 3.3 3.3 3.3 3.3 0.8 0.8 2
o
Value TA = 25 C Min . Typ. 1.0 -0.6 0.8 -0.5 2 1.2 Max. 1.5 -40 to 85 C Min. Max.
o
Unit
V V V V V V
1) Worst case package 2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.3V, (n -1) outputs switching and one output at GND 3) max number of data inputs (n) switching. (n-1) switching 0V to3.3V. Inputs under test switching: 3.3V to threshold (VILD), 0V to threshold (VIHD). f=1MHz
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AC ELECTRICAL CHARACTERISTICS (Input t r = tf =3 ns, VCCA = 4.5 to 5.5V, CL = 50 pF)
Symb ol Parameter Valu e V CCB = 30.3 V o o T A = 25 C -40 to 85 C T yp. Max. Min. Max. (*) 5.1 5.3 6.5 6.7 6.0 3.3 5.4 5.5 5.2 5.8 3.9 2.9 1.0 1.0 8.5 8.5 10.0 10.0 9.5 6.5 8.5 8.5 9.0 9.0 7.0 6.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 9.0 9.0 10.5 10.5 10.0 7.0 9.0 9.0 9.5 9.5 7.5 7.0 1.5 1.5 V CCB =2.7 V o -40 to 85 C Min . Max. 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10.0 10.0 11.5 11.5 10.0 7.5 10.0 10.0 10.0 10.0 7.5 7.5 1.5 1.5 ns ns ns ns ns ns ns Un it
Min. tPLH tPHL tPZL tPZH tPLZ tPHZ tPLH tPHL tPZL tPZH tPLZ tPHZ tOSLZ tOSHL Propagation Delay Time An to Bn Output Enable Time G to Bn Output Disable Time G to Bn Propagation Delay TimeBn to An Output Enable Time G to An Output Disable Time G to An Output to Output Skew Time (note 1, 2) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
1) Skew is defined as the absolute value of the difference between the actual propagation delay for any twooutputs of the same device switching in the same direction, either HIGH or LOW 2) Parameter guaranteed by design (*) Typical values at VCCA = 3.3V VCCB = 5.0V (**) Typical values at VCCA = 3.3V VCCB =3.3V
CAPACITIVE CHARACTERISTICS
Symb ol Parameter T est Con ditio ns V CCB V CCA (V) (V) CINA CI/O CPD Input Capacitance Input/Output Capacitance Power Dissipation Capacitance (note 1) A to B Power Dissipation Capacitance (note 1) B to A open 3.3 3.3 open 5.0 5.0 Min. T yp. 4.5 10 55 Valu e T A = 25 oC Max. -40 to 85 o C Min. Max. pF pF pF Un it
CPD
3.3
5.0
40
pF
1) CPD isdefined as the value of the IC'sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operting current can be obtained by the following equation. ICC(opr) = CPD * VCC *fIN + ICC/8(per circuit)
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74LVX4245
TEST CIRCUIT
T EST tPLH , tPHL tPZL , tPLZ tPZH , tPHZ
CL = 50 pF or equivalent (includes jigand probe capacitance) RL = R1 = 500 orequivalent RT = ZOUT of pulse generator (typically 50)
SW IT CH Open 2VCC Open
WAVEFORM 1: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
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WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cycle)
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SO-24 MECHANICAL DATA
mm MIN. A a1 a2 b b1 C c1 D E e e3 F L S 7.40 0.50 15.20 10.00 1.27 13.97 7.60 1.27 8 (max.) 0.291 0.19 15.60 10.65 0.35 0.23 0.50 45 (typ.) 0.598 0.393 0.05 0.55 0.299 0.050 0.614 0.420 0.10 TYP. MAX. 2.65 0.20 2.45 0.49 0.32 0.013 0.009 0.020 0.004 MIN. inch TYP. MAX. 0.104 0.007 0.096 0.019 0.012
DIM.
L C c1
a2
A
e3
E
D
24
13
1
12
F
a1
b
e
s
P013T
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b1
74LVX4245
TSSOP24 MECHANICAL DATA
mm MIN. A A1 A2 b c D E E1 e K L 0o 0.50 0.05 0.85 0.19 0.09 7.7 6.25 4.3 7.8 6.4 4.4 0.65 BSC 4o 0.60 8o 0.70 0o 0.020 0.10 0.9 TYP. MAX. 1.1 0.15 0.95 0.30 0.2 7.9 6.5 4.48 0.002 0.335 0.0075 0.0035 0.303 0.246 0.169 0.307 0.252 0.173 0.0256 BSC 4o 0.024 8o 0.028 0.004 0.354 MIN. inch TYP. MAX. 0.433 0.006 0.374 0.0118 0.0079 0.311 0.256 0.176
DIM.
A
A2 A1 b e K c L E
D
E1
PIN 1 IDENTIFICATION
1
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com .
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